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| Content Provider | IET Digital Library |
|---|---|
| Author | Lin, Hongxiao Li, Chun He, Zhiwei |
| Abstract | High-K gate dielectric HfAlO thin films with different temperature annealing treatment have been deposited on the Si substrate by atomic layer deposition. The electrical properties of Hf-films are analysed by measurement of high-frequency capacitance–voltage (C–V) and leakage current density–voltage (J–V) characteristics. The electrical measurement results indicate the decrease of equivalent oxide thickness (EOT) due to the great change of microstructure and densification after high temperature annealing and the increase of permittivity. However, the interface state density increases. Moreover, the leakage current increases with the increase of annealing temperature. The HfAlO film annealed at 650°C has the best electrical parameters, such as dielectric constant, EOT and leakage current density determined through capacitance–voltage and current density–voltage measurements were 23.5, 0.84, 6.8 × 10−7 mA·cm−2, respectively. |
| Starting Page | 78 |
| Ending Page | 80 |
| Page Count | 3 |
| Volume Number | 14 |
| e-ISSN | 17500443 |
| Issue Number | Issue 1, Jan (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/14/1 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5262 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2019-01-16 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Annealing Processes Atomic Layer Deposition Capacitance Crystal Microstructure Current Density Densification Dielectric Constant Dielectric Permittivity Dielectric Thin Films Electrical Property Electrical Property of Insulators (thin Films/low-dimensional Structures) Equivalent Oxide Thickness Hafnium Compound Heat And Thermomechanical Treatments HfAlO High Temperature Annealing High Temperature Effect High-frequency Capacitance–voltage Characteristics High-k Dielectric Thin Film Interface State Interface State Density Leakage Current Leakage Current Density–voltage Characteristics Microstructure Photonic Technology Si Substrate Temperature 650.0 DegC Temperature 650.0 °C Vacuum Deposition |
| Content Type | Text |
| Resource Type | Article |
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