NDLI: Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs

Content Provider	IET Digital Library
Author	Liu, Jingqian Wang, Jinyan Xu, Zhe Jiang, Haisang Yang, Zhenchuan Wang, Maojun Yu, Min Xie, Bing Wu, Wengang Ma, Xiaohua Zhang, Jincheng Hao, Yue
Abstract	A self-terminating gate recess wet etching technique with thermal oxidation of the AlGaN/GaN layer followed by etching in potassium hydroxide (KOH) solution was recently proposed by the present authors for normally-off AlGaN/GaN metal–oxide semiconductor field effect transistors (MOSFETs). In this present reported work, the oxidation process inside the AlGaN/GaN heterostructure involved in this technique was analysed using several material characterisation methods. The measurement results show that the concentration and depth of the O element distribution increase with increased thermal oxidation temperature. It is worth noting that after 650°C oxidation almost no O element could be found in the GaN layer and the O element mainly locates in the AlGaN layer with an obvious correlation between the distribution of Al and O elements, where the Al(Ga)-oxide was detected by X-ray photoelectron spectroscopy, which could be etched by 70°C KOH. Thus, self-terminating wet etching on the AlGaN/GaN material is achieved.
Starting Page	1980
Ending Page	1982
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 25, Dec (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/25
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.2790
Journal	Electronics Letters
Publisher Date	2014-11-24
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AlGaN-GaN Aluminium Compound Etching Gallium Compound III-V SemiConductor Insulated Gate Field Effect Transistors KOH Solution Material Characterisation Method Metal-oxide Semiconductor Field Effect Transistors MOSFET Normally-off MOSFETs Oxidation Oxygen Element Distribution Potassium Hydroxide Solution Self-terminating Gate Recess Wet Etching Technique Semiconductor Technology Surface Topography Measurement Temperature 650 DegC Temperature 70 DegC Thermal Oxidation Process Wide Band Gap SemiConductor X-Ray Photoelectron Spectroscopy XPS
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

Non-volatile memory operation in normally-off GaN MOS heterostructure field effect transistors with thin AlGaN barrier

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Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs

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