NDLI: 1200 V FS-IGBT with electric field modulation layer to improve trade-off between avalanche ruggedness and on-state voltage drop

Content Provider	IET Digital Library
Author	Yang, Zhuo Bian, Fangjuan Zhu, Jing Sun, Weifeng Tian, Ye Tong, Xin Zhu, Yuanzheng Ye, Peng
Abstract	In this Letter, a novel 1200 V FS- insulated gate bipolar transistors (IGBT) is proposed to improve the trade-off between avalanche ruggedness and on-state voltage drop. The proposed IGBT features the high doping and thin n-layer under trench gates and we call it the electric field modulation layer (EFM layer). Under the avalanche condition, the EFM layer can form the sharp electric filed distribution in the EFM layer and the avalanche multiplication is constrained in the thin EFM layer. The difference between the holes and electrons due to the avalanche multiplication effect at the emitter side of the IGBT is minished. Therefore, the negative difference resistance in the avalanche I–V curve caused by the difference between the holes and electrons is eliminated. As a consequence, the avalanche ruggedness of the EFM-IGBT is improved. In the on-state, the high doping EFM layer can store the carriers and the on-state voltage drop of the EFM-IGBT is reduced to 1.48 V at 200 A/cm2. Finally, the EFM-IGBT improves the trade-off between avalanche ruggedness and on-state voltage drop.
Starting Page	100
Ending Page	102
Page Count	3
ISSN	00135194
Volume Number	53
e-ISSN	1350911X
Issue Number	Issue 2, Jan (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/53/2
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.3833
Journal	Electronics Letters
Publisher Date	2016-12-08
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Avalanche I-V Curve Avalanche Multiplication Avalanche Multiplication Effect Avalanche Ruggedness Bipolar Transistor EFM-IGBT Electric Field Electric Field Modulation Layer Emitter Side FS-IGBT High Doping EFM Layer Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Negative Difference Resistance On-state Voltage Drop Semiconductor Doping Sharp Electric Filed Distribution Thin N-layer Trench Gate Voltage 1.48 V Voltage 1200 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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