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Content Provider | IET Digital Library |
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Author | Möller, C. Zhang, F. Fuchs, C. Berger, C. Rehn, A. Perez, A. Ruiz Iman, A. Rahimi Hader, J. Koch, M. Moloney, J. V. Koch, S. W. Stolz, W. |
Abstract | The modal properties of a novel vertical-external-cavity surface-emitting laser with (GaIn)As/Ga(AsSb)/(GaIn)As type-II quantum wells are analysed. The device, emitting at a wavelength around 1175 nm, is operated in TEM00 mode and optimised for a high beam quality. The M 2 factors are measured at various pump powers. An excellent beam quality is observed for up to 350 mW with an M 2 < 1.2. |
Starting Page | 93 |
Ending Page | 94 |
Page Count | 2 |
ISSN | 00135194 |
Volume Number | 53 |
e-ISSN | 1350911X |
Issue Number | Issue 2, Jan (2017) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/53/2 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2016.3732 |
Journal | Electronics Letters |
Publisher Date | 2016-12-05 |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | Arsenic Compound Beam Quality Design of Specific Laser System Fundamental Transverse Mode Operation GaInAs-GaAsSb-GaInAs Gallium Compound III-V SemiConductor Indium Compound Laser Beam Laser Beam Characteristic And Interactions Laser Beam Interactions And Property Laser Cavity Resonator Laser Mode Laser Resonator And Cavities Lasing Action in SemiConductor M2 Factors Optimisation Power 350 MW Pump Powers Q Factor Quantum Well Lasers Semiconductor Laser TEM00 Mode Type-II Quantum Wells Type-II Vertical-external-cavity Surface-emitting Laser Wavelength 1175 Nm |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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