NDLI: Low-loss reverse blocking IGBT with PNM structure and trench collectors

Content Provider	IET Digital Library
Author	Liu, Fenghao Huang, Mingmin Li, Rui Lai, Li Gong, Min
Abstract	A reverse blocking insulated gate bipolar transistor (IGBT) with partially narrow mesa (PNM) structure and trench collectors is proposed. An n-type carrier stored (n-cs) layer is introduced between two trench gates with the bulgy bottom, forming the PNM structure, which nicely shields high electric field from the n-cs layer at the forward blocking state. Hence, a highly doped n-cs layer can be used to enhance the carrier storage effect in the n-drift region at on-state to reduce the on-state voltage [V CE(sat)]. Besides, an n-buffer layer is introduced between two trench collectors at the back side, acting as a field-stop (FS) layer at forwarding blocking state. At the reverse blocking state, the trench collectors shield high electric field from the n-buffer region and the n-cs layer acts as an FS layer, which ensures a high reverse breakdown voltage. Numerical simulation results show that the 1.4 kV proposed reverse blocking-IGBT can use a 38% thinner n-drift region and obtain a 45% lower V CE(sat) than the conventional counterpart.
Starting Page	350
Ending Page	351
Page Count	2
ISSN	00135194
Volume Number	55
e-ISSN	1350911X
Issue Number	Issue 6, Mar (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/55/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.7809
Journal	Electronics Letters
Publisher Date	2019-01-30
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bipolar Transistor Buffer Layer Carrier Storage Effect Design And Testing Equivalent Circuit Field-stop Layer Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Low-loss Reverse Blocking IGBT N-buffer Layer N-drift Region N-type Carrier Stored Layer Partially Narrow Mesa Structure PNM Structure Reverse Blocking Insulated Gate Bipolar Transistor Reverse Breakdown Voltage Semiconductor Device Breakdown Semiconductor Device Modelling Semiconductor Doping Trench Collectors Voltage 1.4 KV
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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