NDLI: 4H-SiC trench MOSFET with integrated fast recovery MPS diode

Content Provider	IET Digital Library
Author	Dai, Tianxiang Chan, Chun Wa Deng, Xc Jiang, Huaping Gammon, Peter M. Jennings, Mike R. Mawby, Phil A.
Abstract	A 4H-SiC trench metal–oxide–semiconductor field-effect-transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time. The low electric field in the oxide and Schottky contact surface can be achieved simultaneously using the proposed integration design which enhances the oxide reliability and reduces leakage from the Schottky diode. The integration of the MPS diode reduces the total chip area and the required number of dies compared with the conventional method of using an external Schottky diode.
Starting Page	167
Ending Page	169
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 3, Feb (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/3
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2017.3198
Journal	Electronics Letters
Publisher	The Institution of Engineering and Technology
Publisher Date	2017-12-13
Access Restriction	Open
Rights License	Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)
Subject Keyword	4H-silicon Carbide MOSFET Design Electric Field External Schottky Diode Insulated Gate Field Effect Transistors Integrated Fast Recovery MPS Diode Integrated Merged PiN Schottky Diode Integration Design Junction And Barrier Diode Leakage Reduction Metal-oxide-semiconductor Field-effect-transistor MOSFET Oxide Reliability P-i-n Diode Reliability Schottky Barriers Schottky Contact Schottky Contact Surface Schottky Diode Semiconductor Device Reliability SiC Silicon Compound Total Chip Area Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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