NDLI: SiC trench MOSFET with heterojunction diode for low switching loss and high short-circuit capability

Content Provider	IET Digital Library
Author	An, Junjie Hu, Shengdong
Abstract	A SiC trench MOSFET with a merged heterojunction diode is proposed and numerically analysed here. The merged heterojunction diode can effectively suppress the turn-on of the parasitic body diode in the proposed SiC trench MOSFET. In addition, a P + shield layer surrounding the gate oxide layer can dramatically alleviate the gate oxide corner from the concentration of the electric field and improve the static and dynamic performances of the proposed device. As a result, not only the breakdown voltage is increased by 24% but also the miller charge and the switching losses of the proposed structure are reduced by 43 and 48.6%, respectively, when compared with those of the conventional SiC trench MOSFET with a grounded P + shield layer. Moreover, the short-circuit capability and its failure mechanism are numerically studied for the proposed structure. Finally, a feasible fabrication procedure is provided to realise the fabrication of this new device.
Starting Page	1981
Ending Page	1985
Page Count	5
ISSN	17554535
Volume Number	12
e-ISSN	17554543
Issue Number	Issue 8, Jul (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/12/8
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2019.0035
Journal	IET Power Electronics
Publisher Date	2019-04-02
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Breakdown Voltage Conventional Silicon Carbide Trench MOSFET Electric Field Concentration Fabrication Procedure Failure Analysis Failure Mechanism Gate Oxide Corner Gate Oxide Layer Grounded P+ Shield Layer Insulated Gate Field Effect Transistors Junction And Barrier Diode Low Switching Loss Merged Heterojunction Diode Miller Charge MOSFET Numerical Analysis Parasitic Body Diode Reliability Semiconductor Device Reliability Semiconductor Diode Semiconductor Heterojunction Short-circuit Capability SiC Silicon Compound Switching Loss Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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