NDLI: Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field-effect transistor intrinsic diode

Content Provider	IET Digital Library
Author	Wang, Zhaohui Zhang, Junming Wu, Xinke Sheng, Kuang
Abstract	To use the silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) intrinsic diode as a freewheeling diode in a power converter, its reverse recovery characteristics should be carefully evaluated from the point view of application. The intrinsic diode is based on the p–i–n junction structure, thus the minority carrier will inject into the drift layer during the forward conduction period, which leads to reverse recovery current when it switches off. The turn-off voltage, forward current, current commutating slope (di/dt) and junction temperature are major factors affecting the turn-off process of a diode, and are mostly concerned in practical applications. Therefore, in this study, the reverse recovery characteristics of the intrinsic diode are systematically evaluated based on these four factors. The experimental results are presented and discussed. The reverse recovery characteristics of an SiC Schottky barrier diode (SBD) and two types of silicon (Si) p–i–n diode are also presented for a quantitative comparison. In terms of the reverse recovery performance, although not as good as the SiC SBD, the SiC MOSFET intrinsic diode is much better than the Si p–i–n diode.
Starting Page	969
Ending Page	976
Page Count	8
ISSN	17554535
Volume Number	9
e-ISSN	17554543
Issue Number	Issue 5, Apr (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/9/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2014.0965
Journal	IET Power Electronics
Publisher Date	2016-04-20
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Current Commutating Slope Drift Layer Elemental Semiconductor Forward Conduction Period Forward Current Freewheeling Diode Insulated Gate Field Effect Transistors Junction And Barrier Diode Junction Temperature Metal-oxide-semiconductor Field-effect Transistor Intrinsic Diode Minority Carrier MOSFET Intrinsic Diode P-i-n Diode P-i-n Junction Structure Power Converter Power MOSFET Power Semiconductor Device Power Supplies to Apparatus Reverse Recovery Characteristic Evaluation Schottky Diode Silicon Carbide Intrinsic Diode Silicon Carbide Schottky Barrier Diode Silicon P-i-n Diode Turn-off Voltage
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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