NDLI: An efficient threshold voltage model for ultra thin body double gate/SOI MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Mohammadi, S. Afzali-Kusha, A.
Copyright Year	2009
Description	Author affiliation: Nanoelectronic center of excellence, School of Electrical and Computer Engineering, University of Tehran, Iran (Mohammadi, S.; Afzali-Kusha, A.)
Abstract	In this paper, an efficient non-iterative approach for calculating the threshold voltage of the nanoscale double gate nMOSFET is presented. First, it is shown that the parabolic potential is a reasonable approximation for the body potential along the coordinate normal to the interfaces at the threshold of conduction. Then, the energies of confined carriers are determined by solving the Schrödinger's equation using the WKB approximation. All the coefficients of the potential polynomial are represented analytically in the threshold condition. To assess the accuracy of the proposed model, its predictions have been compared to the results of a numerical simulator and a previously published model. It is also observed that the approach can be extended to an iterative threshold voltage model for 4-terminal fully depleted SOI structures with intrinsic or doped body.
Starting Page	345
Ending Page	348
File Size	697113
Page Count	4
File Format	PDF
ISBN	9781424437047
DOI	10.1109/ULIS.2009.4897606
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-03-18
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Carrier confinement Analytical models Schrodinger equation Potential well Predictive models MOSFET circuits Numerical simulation Threshold voltage Polynomials Iterative methods
Content Type	Text
Resource Type	Article

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