NDLI: Comparison of advanced transport models for nanoscale nMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Palestri, P. Alexander, C. Asenov, A. Baccarani, G. Bournel, A. Braccioli, M. Cheng, B. Dollfus, P. Esposito, A. Esseni, D. Ghetti, A. Fiegna, C. Fiori, G. Aubry-Fortuna, V. Iannaccone, G. Martinez, A. Majkusiak, B. Monfray, S. Reggiani, S. Riddet, C. Saint-Martin, J. Sangiorgi, E. Schenk, A. Selmi, L. Silvestri, L. Walczak, J.
Copyright Year	2009
Description	Author affiliation: IEF, University Paris-Sud, CNRS, Orsay, France (Bournel, A.; Dollfus, P.; Aubry-Fortuna, V.; Saint-Martin, J.) \|\| Warsaw University of Technology, Poland (Majkusiak, B.; Walczak, J.) \|\| ARCES, University of Bologna - IU.NET, Cesena, Italy (Baccarani, G.; Braccioli, M.; Fiegna, C.; Reggiani, S.; Sangiorgi, E.; Silvestri, L.) \|\| ETH Zürich, Gloriastrasse 35, CH-8092, Switzerland (Esposito, A.; Schenk, A.) \|\| DIEGM, University of Udine- IU.NET, Via delle Scienze 208, 33100, Italy (Palestri, P.; Esseni, D.; Selmi, L.) \|\| University of Pisa - IU.NET, Italy (Fiori, G.; Iannaccone, G.) \|\| University of Glasgow, UK (Alexander, C.; Asenov, A.; Cheng, B.; Martinez, A.; Riddet, C.) \|\| Numonyx, R & D - Technology Development, Via Olivetti 2, 20041 Agrate Brianza, Italy (Ghetti, A.) \|\| ST Microelectronics, Crolles, France (Monfray, S.)
Abstract	In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22nm Double-Gate and 32nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.
Starting Page	125
Ending Page	128
File Size	489176
Page Count	4
File Format	PDF
ISBN	9781424437047
DOI	10.1109/ULIS.2009.4897554
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-03-18
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Boltzmann equation Intrusion detection High K dielectric materials Quantization Doping profiles Hafnium oxide Semiconductor process modeling Microelectronics Transistors MOSFETs
Content Type	Text
Resource Type	Article

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