NDLI: Correlation of fin shape fluctuations to FinFET electrical variability and noise margins of 6-T SRAM cells

Content Provider	IEEE Xplore Digital Library
Author	Baravelli, E. De Marchi, L. Jurczak, M. Speciale, N.
Copyright Year	2009
Description	Author affiliation: ARCES/DEIS-University of Bologna, Viale Risorgimento, 2, 40136 Italy (Baravelli, E.; De Marchi, L.; Speciale, N.) \|\| IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium (Jurczak, M.)
Abstract	The impact of fin line-edge roughness on threshold voltage and drive current of LSTP-32nm Fin-FETs is estimated through TCAD simulations. A Monte Carlo approach highlights an increase in the average VT and a decrease in the average ION w.r.t. sensitivity analysis based predictions. Correlations of fin shape fluctuations to electrical performance are investigated. An equivalent fin width is calculated, which allows reducing the spread in ION scatter plots and highlights relative importance of LER in different fin regions. Simplified device instances with linearly varying fin width are simulated to better assess the impact of local thinning/thickening in the channel, S and D extensions, revealing asymmetries in the device behavior upon swapping the taper direction. Impact of LER on noise margins of FinFET-based SRAMs is investigated in the hold, read and write mode of cell operation. Results are compared to published data on fabricated cells with similar device features. μ–6ρ statistics helps with assessing variability concerns for mainstream integration of FinFET-SRAMs in future technology nodes.
Starting Page	19
Ending Page	22
File Size	894991
Page Count	4
File Format	PDF
ISBN	9781424437047
DOI	10.1109/ULIS.2009.4897529
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-03-18
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fluctuations Monte Carlo methods Shape Sensitivity analysis Random access memory Scattering FinFETs Threshold voltage Noise shaping Statistics
Content Type	Text
Resource Type	Article

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