NDLI: Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements

Content Provider	IEEE Xplore Digital Library
Author	Gyani, J. Soliveres, S. Martinez, F. Valenza, M. Le Royer, C. Augendre, E. Romanjek, K. Drazek, C.
Copyright Year	2009
Description	Author affiliation: IES - UNIVERSITE MONTPELLIER II - UMR CNRS 5214, Place E. Bataillon, 34095 Cedex 5, FRANCE (Gyani, J.; Soliveres, S.; Martinez, F.; Valenza, M.) \|\| CEA-LETI Minatec, 17 rue des Martyrs, 38054 Grenoble cedex 9, FRANCE (Le Royer, C.; Augendre, E.; Romanjek, K.) \|\| SOITEC S.A, Parc Technologique des Fontaines, 38190 Bernin, FRANCE (Drazek, C.)
Abstract	This paper presents an experimental analysis of the noise measurements performed in germanium on insulator (GeOI) 0.12 μm PMOS transistors. The front gate stack is composed of a SiO2/HfO2 material with a TiN metal gate electrode. The result is an aggressively reduced equivalent oxide thickness (EOT) of 1.8 nm. The buried oxide is used as a back gate for experimental purposes. Front gate and back gate oxides/Ge interfaces are characterized. The slow oxide trap densities of the two interfaces are extracted. The values obtained for the front gate oxide are Nt(EFn) = 1.2 $10^{18}$ $cm^{−3}$ $eV^{−1}$ and are comparable to values for nitrided oxides on Si bulk. The extracted values for slow oxide trap densities of the SiO2/Ge interface are between 6 and 8 1017 $cm^{−3}$ $eV^{−1}$ and are close to those of state of art buried oxide SiO2/Si interfaces. These results are of importance for the future development of GeOI technologies.
Starting Page	87
Ending Page	90
File Size	895080
Page Count	4
File Format	PDF
ISBN	9781424437047
DOI	10.1109/ULIS.2009.4897545
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-03-18
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Performance evaluation Electrodes Insulation Inorganic materials Tin Germanium Hafnium oxide Performance analysis Noise measurement MOSFETs
Content Type	Text
Resource Type	Article

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