NDLI: Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3

Content Provider	IEEE Xplore Digital Library
Author	Xinhong Cheng Dawei He Zhaorui Song Yuehui Yu Qing-Tai Zhao DaShen Shen
Copyright Year	2009
Description	Author affiliation: University of Alabama in Huntsville, 35899, USA (DaShen Shen) \|\| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Sciences, Changning Road 865, 200050, China (Xinhong Cheng; Dawei He; Zhaorui Song; Yuehui Yu) \|\| Institute of Bio- and Nanosystems (IBN1-IT), Forschungszentrum Juelich, 52425, Germany (Qing-Tai Zhao)
Abstract	HfO2 gate dielectric films with a blocking layer of Al2O3 inserted between HfO2/Si were treated with rapid thermal annealing process at 700°C. The interfacial structure and electrical properties are reported. X-ray photoelectron spectroscopy indicated that the interfacial layer of SiOx transformed into SiO2 after the annealing treatment, and Hf-silicates and Hf-silicides were not detected. High-resolution transmission electron microscopy showed that the interfacial layer was composed of SiO2 for the annealed film with a blocking layer. The electrical measurements indicated that the equivalent oxide thickness decreased to 2.5nm and the fixed charge density decreased to $−4.5×10^{11}/cm^{2}$ in comparison with the same thickness of HfO2 films without the blocking layer. Al2O3 layer could effectively prevent the diffusion of Si into HfO2 film and improve the interfacial and electrical performance of HfO2 film.
Starting Page	205
Ending Page	208
File Size	768526
Page Count	4
File Format	PDF
ISBN	9781424437047
DOI	10.1109/ULIS.2009.4897572
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-03-18
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spectroscopy blocking layer Semiconductor films X-ray detectors Density measurement HfO2 X-ray detection Hafnium oxide Dielectric films Al2O3 Rapid thermal annealing Rapid thermal processing Transmission electron microscopy gate dielectrics
Content Type	Text
Resource Type	Article

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