NDLI: Vth-control method in double gate field effect transistor domino circuits

Content Provider	IEEE Xplore Digital Library
Author	Zeinolabedinzadeh, S. Ebrahimi, B. Afzali-Kusha, A.
Copyright Year	2009
Description	Author affiliation: School of Electrical and Computer Engineering, University of Tehran, Iran (Zeinolabedinzadeh, S.; Ebrahimi, B.; Afzali-Kusha, A.)
Abstract	In this paper we investigate the possibility of power reduction in DGFET devices by means of Vth control technique applied for domino logics. Previously the effectiveness of Vth control method by means of back gate biasing has been investigated. In this paper we show that by special using back gate to control the threshold voltage we can save not only significant standby power but even considerable dynamic power for domino circuits while preserving their speed. Comparing Vth control method with the conventional double gate scheme and a recently published successful work, showed the performance of this method. It is shown that the performance of this method will be better in higher temperatures. Simulations were done by HSPICE circuit simulator using DGFET PTM model.
Starting Page	297
Ending Page	300
File Size	591056
Page Count	4
File Format	PDF
ISBN	9781424437047
DOI	10.1109/ULIS.2009.4897594
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-03-18
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Domino logic Energy consumption Vth-control method Circuit simulation Inverters Voltage control Double-gate FETs Logic circuits Threshold voltage double-gate field effect transistors Logic devices Clocks Parasitic capacitance
Content Type	Text
Resource Type	Article

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