NDLI: Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT

Content Provider	IEEE Xplore Digital Library
Author	Luther-King, N. Sweet, M. Narayanan, E.M.S.
Copyright Year	1986
Abstract	We report results of comprehensive 2-D simulation evaluation of the first MOS-controlled thyristor structure employing the super junction concept on a 1.2-kV field stop structure. In comparison to a standard device, simultaneous reduction in V_ce(sat) and E_off can be achieved in a super junction trench clustered insulated gate bipolar transistor (SJ-TCIGBT). The simulation results show that up to 80% reduction in E_off is possible. Unlike the super junction insulated gate bipolar transistors, there is no significant increase in the saturation current with the anode voltage or the depth of the pillars. SJ-TCIGBT is a highly promising next generation device concept with record-breaking V_ce(sat)-E_off tradeoff enhancement to improve converter efficiency.
Sponsorship	IEEE Power Electronics Society
Starting Page	3072
Ending Page	3080
Page Count	9
File Size	1152636
File Format	PDF
ISSN	08858993
Volume Number	27
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Insulated gate bipolar transistors Junctions Doping Anodes Electric fields Cathodes Trench CIGBT (TCIGBT) Clustered insulated gate bipolar transistor (CIGBT) insulated gate bipolar transistor (IGBT) MOS-bipolar transistor MOS-controlled thyristor power semiconductor device super junction IGBT (SJ-IGBT) Super Junction Trench CIGBT (SJ-TCIGBT)
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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