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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Oda, S. |
| Copyright Year | 2011 |
| Description | Author affiliation: Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Japan (Oda, S.) |
| Abstract | NeoSilicon is a novel functional material consisted of ensemble of nanocrystalline Si quantum dots with controlled dot size and inter-dot distance. Bandgap of NeoSilicon can be controlled by dot size due to the quantum size effect and transport properties are controlled by inter-dot distance due to the tunneling effect. A variety of new applications, such as ballistic electron surface emitting display, high-efficiency light-emitting devices and photovoltaic devices is expected. MOS and NEM hybrid devices are promising for logic, memory and sensing applications, since new functions with ultralow power consumption are expected. Further scaling of NEM devices may provide novel functions based on unique phonon dispersion characteristics in nm-scale. Precise control of charge states in the multiple-coupled quantum dots is essential for spin based quantum information processing. In this talk, I will introduce fabrication of highly integrated nanocrystalline Si dots with uniform size, non-volatile NEM memory devices with a bistable floating gate, NEM-SET hybrid transistors, and unique transport processes in multiple-coupled quantum dot systems. |
| Starting Page | 23 |
| Ending Page | 26 |
| File Size | 345433 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457703041 |
| e-ISBN | 9788393207527 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-06-16 |
| Publisher Place | Poland |
| Access Restriction | Subscribed |
| Rights Holder | Tech Univ of Lodz |
| Subject Keyword | Silicon nanocrystals Nonvolatile memory Quantum dots Phonons Logic gates NEMS non-volatile memory Silicon Nanoscale devices Plasmas quantum information devices |
| Content Type | Text |
| Resource Type | Article |
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