NDLI: Comprehensive analysis of traps in InGaP/GaAs HBT by GR noise

Content Provider	IEEE Xplore Digital Library
Author	Al Hajjar, A. Nallatamby, J.-C. Prigent, M.
Copyright Year	2014
Description	Author affiliation: XLIM, Univ. de Limoges, Brive-la-Gaillarde, France (Al Hajjar, A.; Nallatamby, J.-C.; Prigent, M.)
Abstract	In this paper, we will present a comprehensive analysis of low frequency noise in InGaP/GaAs HBT transistor, which is developed in two main axes: first, we report a study of the low frequency noise characteristics of InGaP/GaAs HBT. Our measurements were performed over the frequency range from 100 Hz to 10 MHz, under different biasing conditions and over the temperature range from 300°K to 375°K at low as well as high injection levels. Low frequency (LF) generation recombination (GR) noise measurements revealed an electron trap with activation energy of 0.536 eV. Secondly, from a rigorous physics-based noise simulation using the Langevin approach within the framework of Green's function, traps detected by temperature-dependent experimental observation are located at the heterointerface δ-InGaP/GaAs, responsible for the GR noise sources. Comparisons between LF noise measurement and numerical physics-based device noise simulation of base TLM, base-collector junction and base-emitter heterojunction allow us to locate precisely the origin of LF noise of InGaP/GaAs HBT.
Starting Page	1
Ending Page	4
File Size	734460
Page Count	4
File Format	PDF
ISBN	9781479949946
DOI	10.1109/PRIME.2014.6872695
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-30
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Semiconductor device measurement Noise corner frequencies LF Noise Measurement Traps Gallium arsenide Numerical simulation Low-frequency noise Heterojunction bipolar transistors Noise measurement InGaP/GaAs heterojunction
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Characterization and simulation of traps in InGaP/GaAs HBT by GR noise analysis

Low frequency noise of InGaP/GaAs HBT at high injection: A comprehensive analysis of base-collector, base-emitter junctions and base layer TLM

Noise in advanced bipolar transistors at mm-wave frequencies

Design of a 4–12GHz frequency doubler MMIC based on InGaP/GaAs HBT process

Low noise 5 GHz differential VCO using InGaP/GaAs HBT technology

An InGaP/GaAs HBT transimpedance amplifier for 10 Gbps optical communication

On the simulation of low-frequency noise upconversion in InGaP/GaAs HBTs

Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT

A 25-GHz ultra-low phase noise InGaP/GaAs HBT VCO

Comprehensive analysis of traps in InGaP/GaAs HBT by GR noise

Similar Documents

Characterization and simulation of traps in InGaP/GaAs HBT by GR noise analysis

Low frequency noise of InGaP/GaAs HBT at high injection: A comprehensive analysis of base-collector, base-emitter junctions and base layer TLM

Noise in advanced bipolar transistors at mm-wave frequencies

Design of a 4–12GHz frequency doubler MMIC based on InGaP/GaAs HBT process

Low noise 5 GHz differential VCO using InGaP/GaAs HBT technology

An InGaP/GaAs HBT transimpedance amplifier for 10 Gbps optical communication

On the simulation of low-frequency noise upconversion in InGaP/GaAs HBTs

Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT

A 25-GHz ultra-low phase noise InGaP/GaAs HBT VCO

Comprehensive analysis of traps in InGaP/GaAs HBT by GR noise