NDLI: Monolithically integrated voltage level shifter for Wide Bandgap Devices-based converters

Content Provider	IEEE Xplore Digital Library
Author	Grezaud, R. Ayel, F. Rouger, N. Crebier, J.-C.
Copyright Year	2014
Description	Author affiliation: G2Elab, Univ. Grenoble Alpes, Grenoble, France (Rouger, N.; Crebier, J.-C.) \|\| LETI, CEA, Grenoble, France (Grezaud, R.; Ayel, F.)
Abstract	Power converters based on Wide Bandgap Devices (WBD) are able to operate at high-frequency and high-voltage. In such synchronous converters a very short dead-time is advised because a lot of WBD do no have a parasitic body diode to conduct current in reverse. Into a high-voltage inverter, isolators generate isolated floating gate signals from logic level input signals. Mismatch between high-side and low-side signal propagation delays involves setting a long secure dead-time. To overcome this matching issue in order to guarantee the dead-time duration and time location, we propose other input signal propagation paths. Both input signals pass through a single low-side 2-channel digital isolator and one isolated signal is translated to the high-side gate driver by a high-speed monolithically integrated level-shifter. The proposed voltage level translator structure has been implemented with a high-voltage diode-less SiC vertical JFET and low voltage MOSFETs. At 240V power supply voltage and 100 kHz switching frequency, the level-shifter propagation delay is only 10 ns with a 1.85 mA supply current. Moreover an effective built-in current regulator prevents the circuit from any current spikes, overvoltage and overconsumption. Such topology allows to safely set a very short 23 ns dead-time and improves WBD-based converter operations while reducing size and price.
Starting Page	1
Ending Page	4
File Size	767079
Page Count	4
File Format	PDF
ISBN	9781479949946
DOI	10.1109/PRIME.2014.6872759
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-30
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Isolators Power supplies wide bandgap devices Inverters Semiconductor diodes Voltage control monolithically integrated voltage level translator dead-time reduction level-shifter Logic gates diode-less synchronous converter propagation delay matching Propagation delay
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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