NDLI: A 25-GHz ultra-low phase noise InGaP/GaAs HBT VCO

Content Provider	IEEE Xplore Digital Library
Author	Mingquan Bao Yinggang Li Jacobsson, H.
Copyright Year	2001
Abstract	A 25-GHz monolithic voltage controlled oscillator (VCO) has been designed and fabricated in a commercial InGaP/GaAs heterojunction bipolar transistor (HBT) process. This balanced VCO has a novel topology using a feedback /spl pi/-network and a common-emitter transistor configuration. Ultra-low phase noise is achieved: -106 dBc/Hz and -130 dBc/Hz at 100kHz and 1-MHz offset frequency, respectively. To the authors' knowledge, this is the lowest phase noise achieved in a monolithic microwave integrated circuit (MMIC) VCO at such high frequency. The single-ended output power is -1 dBm. It can be tuned between 25.33GHz and 25.75GHz using the base-collector junction capacitor of the HBT as a varactor. The dc power consumption is 90mW for a 9-V supply. An excellent figure-of-merit of -195 dBc/Hz is obtained.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	751
Ending Page	753
Page Count	3
File Size	260224
File Format	PDF
ISSN	15311309
Volume Number	15
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Phase noise Gallium arsenide Heterojunction bipolar transistors Voltage-controlled oscillators Frequency MMICs Circuit topology Feedback Microwave transistors Integrated circuit noise voltage controlled oscillator (VCO) InGaP/GaAs heterojunction bipolar transistor (HBT) phase noise
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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