NDLI: Optimization of AlGaN/GaN HEMT Schottky contact for microwave applications

Content Provider	IEEE Xplore Digital Library
Author	Bouzid-Driad, S. Maher, H. Renvoise, M. Frijlink, P. Rocchi, M. Defrance, N. Hoel, V. De Jaeger, J.C.
Copyright Year	2012
Description	Author affiliation: IEMN (Institut d'Electronique, de Microélectronique, et de Nanotechnologie), UMR CNRS 8520, Villeneuve d'Ascq, France (Defrance, N.; Hoel, V.; De Jaeger, J.C.) \|\| OMMIC, Limeil-Brévannes, Ile de France (Bouzid-Driad, S.; Maher, H.; Renvoise, M.; Frijlink, P.; Rocchi, M.)
Abstract	Platinum (Pt/Ti/Pt/Au) gate contact of AlGaN/GaN high electron mobility transistor (HEMT) with low gate leakage current is demonstrated. For comparison, Titanium (Ti/Al/Ti) gate devices are also fabricated using the same process flow except the gate topology which is double T-shaped gate for Ti/Al/Ti. Comparable extrinsic transconductance is obtained for the two kinds of devices ranging 400 mS/mm. At gate voltage of −3 V, typical gate leakage current is found to be as low as 1 µA for a 2×50×0.110 $µm^{2}$ Pt-gate device. This value is 10 times lower than that of Ti/Al/Ti-gate device measured under the same bias conditions. RF measurement demonstrates FMAX/FT of 170/80 and 200/70 on devices based on Pt/Ti/Pt/Au and Ti/Al/Ti Schottky contacts respectively. These results indicate that platinum could be a promising gate metallization candidate for high-performance microwave power AlGaN/GaN HEMTs on Si substrate.
Starting Page	119
Ending Page	122
File Size	288243
Page Count	4
File Format	PDF
ISBN	9781467323024
e-ISBN	9782874870286
e-ISBN	9782874870262
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-29
Publisher Place	Netherlands
Access Restriction	Subscribed
Rights Holder	European Microwave Assoc
Subject Keyword	Gold AlGaN/GaN HEMTs Schottky contact double-T-shaped-Ti/Al/Ti-gate gate leakage current Schottky barriers platinum-gate Logic gates HEMTs Gallium nitride MODFETs Aluminum gallium nitride
Content Type	Text
Resource Type	Article

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Optimization of AlGaN/GaN HEMT Schottky contact for microwave applications

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