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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | King, J.B. Brazil, T.J. |
| Copyright Year | 2012 |
| Description | Author affiliation: School of Electrical, Electronic and Communications Engineering, University College Dublin, Dublin 4, Ireland (King, J.B.; Brazil, T.J.) |
| Abstract | A complete equivalent circuit model (ECM) for a gallium nitride (GaN) high electron-mobility transistor (HEMT) is described. The model can accurately calculate the pulsed IV (PIV) drain-current over a large range of time instants, while simultaneously providing excellent predication of the DC drain characteristics. This highly accurate fit is achieved using a novel dispersion modelling procedure, which is described within. Trapping effects are taken into account by an effective voltage calculated via filter networks at the gate and drain which allow automatic model calculation of the device quiescent point. One-tone and two-tone tests show very good harmonic and intermodulation distortion prediction capabilities of the model, from small signal up to saturation power levels. Small-signal results are also demonstrated in the form of measured and modelled S-parameters. |
| Starting Page | 68 |
| Ending Page | 71 |
| File Size | 198363 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467323024 |
| e-ISBN | 9782874870286 |
| e-ISBN | 9782874870262 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | Netherlands |
| Access Restriction | Subscribed |
| Rights Holder | European Microwave Assoc |
| Subject Keyword | HEMTs Microwave transistors Mathematical model Integrated circuit modeling Gallium nitride Dispersion |
| Content Type | Text |
| Resource Type | Article |
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