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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | YuanFei Cen McCann, D. |
| Copyright Year | 2012 |
| Description | Author affiliation: M/A-COM Technology Solutions, 1500 Hughes Way, Suite C-100, Long Beach, CA 90810, U.S.A. (YuanFei Cen; McCann, D.) |
| Abstract | In this paper we report on the first reported use of high power GaN PA's in low cost plastic 3×6mm DFN packages for true SMT insertion in pulse RADAR applications. The individual plastic packaged GaN PA's are intended for broadband use in pulsed mode of operation and powers levels of 100W through S-Band, representing the smallest size true SMT GaN packages at this power level ever reported. The paper will describe in detail the obstacles to be overcome before GaN devices can be used in traditional high volume COTS manufacturing environments and the advantages over traditional packaging approaches currently available in the marketplace. Transient and average thermal measurements under power will be provided. The authors believe this to be a first for GaN devices packaged to this power level that makes use of existing plastic packaging techniques available in subcontract manufacturing facilities without compromising performance or reliability while reducing cost and size of the final application solution. |
| Starting Page | 333 |
| Ending Page | 336 |
| File Size | 729200 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467323024 |
| e-ISBN | 9782874870286 |
| e-ISBN | 9782874870262 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | Netherlands |
| Access Restriction | Subscribed |
| Rights Holder | European Microwave Assoc |
| Subject Keyword | Performance evaluation Power Amplifiers TDMA RADAR SATCOM Plastic SiC Gallium nitride DFN Temperature measurement COTS Fingers GaN Logic gates Plastics Transient analysis |
| Content Type | Text |
| Resource Type | Article |
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