NDLI: High breakdown AlGaN/GaN HEMTs employing double metal structure

Content Provider	IEEE Xplore Digital Library
Author	Young-Shil Kim Min-Woo Ha O-Gyun Seok Woo-Jin An Min-koo Han
Copyright Year	2012
Description	Author affiliation: Korea Electrics Technology Institute, Seongnam, Gyeonggi-do Korea (Min-Woo Ha) \|\| School of Electrical Engineering, Seoul National University, Korea (Young-Shil Kim; O-Gyun Seok; Woo-Jin An; Min-koo Han)
Abstract	We have proposed and fabricated AlGaN/GaN HEMTs employing a nickel oxide (NiO) based double metal structure which showed a stable reverse blocking characteristics. The leakage current of the proposed device was decreased by four orders of magnitude. The leakage current of the conventional device at room temperature was 80 µA/mm while that of the proposed device was 16.6 nA/mm. In the high temperature reverse bias (HTRB) test, the ratio of the gate leakage current to the total leakage was decreased with operational temperature. From experimental results of the HTRB test, it was demonstrated that NiO-based double gate contact was thermally and electrically robust and made a significant contribution to stable blocking operation. In terms of the breakdown behavior, the device with a double metal structure successfully suppressed the premature breakdown while conventional one showed a soft breakdown behavior. The measured breakdown voltage (V) of the conventional device was 1310 V while V of the proposed device was 1480 V with almost no walkout. The stable reverse blocking characteristics of the proposed device was attributed to the resistance switching property of the nickel oxide film and the high barrier height established between thermally oxidized nickel film and surface of the device.
Starting Page	273
Ending Page	277
File Size	1400234
Page Count	5
File Format	PDF
ISBN	9781457715945
ISSN	19460201
e-ISBN	9781457715976
e-ISBN	9781457715969
DOI	10.1109/ISPSD.2012.6229076
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride HEMTs MODFETs Leakage current Aluminum gallium nitride Logic gates Films
Content Type	Text
Resource Type	Article

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