NDLI: A distributed electro-thermal model of AlGaN/GaN HEMT power-bar derived from the elementary cell model

Content Provider	IEEE Xplore Digital Library
Author	Xiong, A. Gatard, E. Charbonniaud, C. Faqir, M. Kuball, M. Buchta, M. Rochette, S. Favede, L. Ouarch, Z. Floriot, D.
Copyright Year	2012
Description	Author affiliation: United Monolithic Semiconductors sas, France (Favede, L.; Ouarch, Z.; Floriot, D.) \|\| AMCAD Engineering, France (Xiong, A.; Gatard, E.; Charbonniaud, C.) \|\| United Monolithic Semiconductors GmbH, Germany (Buchta, M.) \|\| University of Bristol, United Kingdom (Faqir, M.; Kuball, M.) \|\| THALES ALENIA SPACE, France (Rochette, S.)
Abstract	This paper deals with the development of a 120W AlGaN/GaN power bar model starting from the modeling of the elementary cell of the device. The approach consists in coupling a distributed thermal model of the power bar to each electro-thermal model of the elementary cells which constitute the power bar. The distributed nature of the temperature is taken into account by mean of a thermal RC network generated from the 3D Finite Element (FE) simulations. These thermal simulations take into account of the non linearity of the thermal conductivity with the temperature and the thermal coupling between the cells. The studied power bar is made of fifteen elementary cells juxtaposed, i.e. 15×(6×400µm) AlGaN/GaN HEMT devices. First, a full on wafer characterizations campaign, i.e. pulsed I(V) with pulsed S parameters and load-pull measurements, has been led on the elementary cell devices in order to extract and validate the unitary cell model 6x400µm. Then, preliminary stability tests and S parameters have been performed in order to validate the ability to safely measure the power bar mounted on the dedicated test vehicle. Load-pull measurements were then performed on the power bar and compared to the simulations given by the developed power bar model. Finally, a last comparison between the simulation of the High Power Amplifier (HPA) design and its breadboard measurement in L band fully validated the power bar model and the practical methodology used.
Starting Page	64
Ending Page	67
File Size	235808
Page Count	4
File Format	PDF
ISBN	9781467323024
e-ISBN	9782874870286
e-ISBN	9782874870262
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-29
Publisher Place	Netherlands
Access Restriction	Subscribed
Rights Holder	European Microwave Assoc
Subject Keyword	Semiconductor device modeling Solid modeling high power amplifier Power measurement Electro thermal model Finite element analysis distributed thermal model AlGaN/GaN power bar Transistors Integrated circuit modeling Load modeling
Content Type	Text
Resource Type	Article

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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