NDLI: An E-band very low noise amplifier with variable gain control on 100 nm GaAs pHEMT technology

Content Provider	IEEE Xplore Digital Library
Author	Byk, E. Couturier, A.M. Camiade, M. Teyssandier, C. Hosch, M. Stieglauer, H. Fellon, P.
Copyright Year	2012
Description	Author affiliation: United Monolithic Semiconductors SAS, 10 avenue du Québec, 91140 Villebon-sur-Yvette, France (Byk, E.; Couturier, A.M.; Camiade, M.; Teyssandier, C.; Fellon, P.) \|\| United Monolithic Semiconductors GmbH, Wilhelm Runge Strasse 11, 89081 Ulm, Germany (Hosch, M.; Stieglauer, H.)
Abstract	Design methodology and measurements of an E-band very low noise amplifier (LNA) are presented in this paper. This four stages MMIC is manufactured on UMS 4 inch 100 nm GaAs pHEMT technology with BCB coating. The chip size is 3.35 × 1.12 $mm^{2}.$ On-wafer measurements, close to simulation results, exhibit a gain of 22 dB associated to 4 dB noise figure in the 71–86 GHz frequency band (less than 3.5 dB in the 76–86 GHz sub-band). An output power of 10 dBm at 1 dB compression at maximum gain and 12 dB gain control dynamic range are also demonstrated in the entire frequency band by tuning the gate voltage from −3 to −2 V. To our knowledge, these performances are among the best reported up to now for an E-band LNA.
Starting Page	111
Ending Page	114
File Size	529762
Page Count	4
File Format	PDF
ISBN	9781467323024
e-ISBN	9782874870286
e-ISBN	9782874870262
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-29
Publisher Place	Netherlands
Access Restriction	Subscribed
Rights Holder	European Microwave Assoc
Subject Keyword	Noise figure PHEMTs Noise Gallium arsenide Logic gates MMICs Gain
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

X-band GaAs pHEMT MMIC low-noise amplifier

Ka-band self-biased monolithic gaas pHEMT low noise amplifier

X-band MMIC Low-Noise Amplifier Based on 0.15 μm GaAs Phemt Technology

Coplanar W-band low noise amplifier MMIC using 100-nm gate-length GaAs PHEMTs

0.1-µm GaAs PHEMT W-band low noise amplifier MMIC using coplanar waveguide technology

Low-noise amplifier with 12.1 dB gain and 5.456 dB NF for V-band applications in GaAs 0.15μm pHEMT process

An optimized 0.1 um T-gate AlGaAs/InGaAs/GaAs PHEMT power amplifier MMIC for Ka-band applications

A Dual-Band Low Noise Amplifier in Enhancement-mode GaAs pHEMT Technology

A Q-band high gain and low noise variable gain amplifier using dual gate HEMTs

An E-band very low noise amplifier with variable gain control on 100 nm GaAs pHEMT technology

Similar Documents

X-band GaAs pHEMT MMIC low-noise amplifier

Ka-band self-biased monolithic gaas pHEMT low noise amplifier

X-band MMIC Low-Noise Amplifier Based on 0.15 μm GaAs Phemt Technology

Coplanar W-band low noise amplifier MMIC using 100-nm gate-length GaAs PHEMTs

0.1-µm GaAs PHEMT W-band low noise amplifier MMIC using coplanar waveguide technology

Low-noise amplifier with 12.1 dB gain and 5.456 dB NF for V-band applications in GaAs 0.15μm pHEMT process

An optimized 0.1 um T-gate AlGaAs/InGaAs/GaAs PHEMT power amplifier MMIC for Ka-band applications

A Dual-Band Low Noise Amplifier in Enhancement-mode GaAs pHEMT Technology

A Q-band high gain and low noise variable gain amplifier using dual gate HEMTs

An E-band very low noise amplifier with variable gain control on 100 nm GaAs pHEMT technology