NDLI: High power handling low-voltage RF MEMS switched capacitors

Content Provider	IEEE Xplore Digital Library
Author	Stefanini, R. Guines, C. Barriere, F. Lemoine, E. Blondy, P.
Copyright Year	2012
Description	Author affiliation: XLIM -UMR no6172, University of Limoges/CNRS, FRANCE (Guines, C.; Barriere, F.; Lemoine, E.) \|\| AirMeMs, Limoges, FRANCE (Stefanini, R.; Blondy, P.)
Abstract	A new topology of high power handling RF MEMS switched capacitor is presented in this paper. The design has been optimized in order to get low sensitivity to mechanic stress and temperature while keeping a low pull-down voltage (17 V). Two MEMS switched capacitors have been fabricated in back-to-back configuration and results in a Cup=92 fF and Cdown=260 fF. The IP1 and the hold down power of the device have been measured at 3 GHz and are respectively 2.8 and 3.3 W. A 2 bit array with higher capacitance values (270–610 fF) is also fabricated. Reliability measurements are presented and show a pull-in voltage variation of 5 V after 3.75 hours hold in the downstate position.
Starting Page	449
Ending Page	452
File Size	258969
Page Count	4
File Format	PDF
ISBN	9781467323024
e-ISBN	9782874870286
e-ISBN	9782874870262
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-29
Publisher Place	Netherlands
Access Restriction	Subscribed
Rights Holder	European Microwave Assoc
Subject Keyword	Micromechanical devices Radio frequency Temperature sensors stress Voltage measurement RF MEMS switched capacitor Capacitors Switches reliability power handling Stress
Content Type	Text
Resource Type	Article

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