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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kashiwa, T. Komaru, M. Katoh, T. Yoshida, N. Tanino, N. Takagi, T. Ishihara, O. |
| Copyright Year | 1995 |
| Description | Author affiliation: Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan (Kashiwa, T.; Komaru, M.; Katoh, T.; Yoshida, N.; Tanino, N.; Takagi, T.; Ishihara, O.) |
| Abstract | A Q-band high gain and low noise Variable Gain Amplifier (VGA) using dual gate AlGaAs/InGaAs pseudomorphic HEMTs has been developed. The dual gate HEMT can be fabricated using the same process as the single gate HEMT with a gate length of 0.15 /spl mu/m. The Q-band VGA consists of a 1-stage low noise amplifier MMIC using a single gate HEMT and a 2-stage VGA MMIC using dual gate HEMTs. The VGA has a gain of more than 20 dB from 41 GHz to 52 GHz. A gain control range of more than 30 dB is obtained in the same frequency range. A minimum noise figure of 1.8 dB with an associated gain of 22 dB is achieved at 43 GHz when biased for a low noise figure. This performance is comparable with the best data ever reported for LNAs at Q-band including both GaAs based HEMTs and InP based HEMTs. |
| Starting Page | 210 |
| Ending Page | 213 |
| File Size | 483302 |
| Page Count | 4 |
| File Format | |
| ISBN | 078032966X |
| DOI | 10.1109/GAAS.1995.528996 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-10-29 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Low-noise amplifiers Noise figure PHEMTs Gallium arsenide HEMTs MMICs Frequency Indium gallium arsenide Gain control Indium phosphide |
| Content Type | Text |
| Resource Type | Article |
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