NDLI: InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications

Content Provider	IEEE Xplore Digital Library
Author	Yi Chang, E. Chien-I Kuo Heng-Tung Hsu Chia-Yuan Chang
Copyright Year	2008
Description	Author affiliation: Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu (Yi Chang, E.; Chien-I Kuo; Chia-Yuan Chang) \|\| Dept. of Commun. Eng., Yuan Ze Univ., Taoyuan (Heng-Tung Hsu)
Abstract	80-nm InAs channel HEMTs with different lattice matched sub-channels, $In_{0.53}Ga_{0.47}As$ and $In_{0.7}Ga_{0.3}As,$ have been fabricated. The device with $InAs/In_{0.7}Ga_{0.3}As$ composite channel exhibits high drain current density (1101 mA/mm), and high transconductance (1605 mS/mm) at drain bias $V_{DS}$ = 0.8 V. The high current gain cutoff frequency $(f_{t})$ of 360 GHz and maximum oscillation frequency $(f_{max})$ of 380 GHz of the device with $InAs/In_{0.7}Ga_{0.3}As$ were obtained at $V_{DS}$ = 0.7 V in comparison to the $InAs/In_{0.53}Ga_{0.47}$ As channel HEMTs with $f_{t}$ = 310 and $f_{max}$ = 330 GHz. This is due to the high electron mobility and electron confinement in the $InAs/In_{0.7}Ga_{0.3}As$ channel. In addition, a low gate delay time 0.84 psec was obtained at $V_{DS}$ = 0.5 V. The excellent performance of the InAs channel HEMTs demonstrated in this study shows great potential for high speed and very low power logic applications with the optimal design of $In_{0.7}Ga_{0.3}As/InAs/In_{0.7}Ga_{0.3}As$ composite channel.
Starting Page	198
Ending Page	201
File Size	236992
Page Count	4
File Format	PDF
ISBN	9782874870071
DOI	10.1109/EMICC.2008.4772263
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-27
Publisher Place	Netherlands
Access Restriction	Subscribed
Rights Holder	European Microwave Assoc.
Subject Keyword	Wet etching Gold HEMTs Electron mobility MODFETs Current density Indium phosphide FETs Substrates Transconductance
Content Type	Text
Resource Type	Article

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