NDLI: The temperature model limits for high electron mobility transistors

Content Provider	IEEE Xplore Digital Library
Author	Klimova, A.V.
Copyright Year	2004
Description	Author affiliation: Fed. State Unitary Corp. R&PC, Moscow Region, Russia (Klimova, A.V.)
Abstract	Comparison of temperature and hydrodynamic models for high electron mobility transistors has been carried out. It is shown that the real space transfer in the transistor heterostructures and the strongly energy dependent relaxation times are mostly responsible for the spectacular difference in calculations for HEMT with gate length sufficiently greater than momentum relaxation length. The temperature model may lead to more than 20% error in current and transconductance, beginning from length as long as 0.5/spl mu/, which markedly exceeds the gate length characteristic to modem HEMT. The different models produce a big difference in the drift velocity distribution in the transistor channel, especially when the channel is open and the real space transfer is considerable. The reasons for this effect are as follows: the lateral size of the quantum well is much less than electron momentum relaxation length and electron current flowing transverse to the heterostructure border is really high, even in comparatively low fields. The electron density in the quantum well strongly depends on transverse electron current, which is different for the temperature and hydrodynamic models. For example, in In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As HEMT with 1/spl mu/ gate length, the drift velocity under the gate is 30% more in the temperature model than in the hydrodynamic model.
Starting Page	155
Ending Page	156
File Size	181803
Page Count	2
File Format	PDF
ISBN	9667968693
DOI	10.1109/CRMICO.2004.183143
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-13
Publisher Place	Ukraine
Access Restriction	Subscribed
Rights Holder	GMiCo 2004 Organizing Committee
Subject Keyword	HEMTs MODFETs Gallium arsenide Indium phosphide Indium gallium arsenide Transconductance Hydrodynamics Ink IEEE catalog
Content Type	Text
Resource Type	Article

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