NDLI: Increased reliability of AlGaN/GaN HEMTs versus temperature using deuterium

Content Provider	IEEE Xplore Digital Library
Author	Astre, G. Tartarin, J.G. Chevallier, J. Delage, S.
Copyright Year	2008
Description	Author affiliation: LAAS CNRS, Univ. of Toulouse, Toulouse (Astre, G.; Tartarin, J.G.) \|\| III-V Lab., TIGER, Alcatel-Thales, Marcoussis (Delage, S.) \|\| GEMaC, Meudon (Chevallier, J.)
Abstract	Low frequency noise (LFN) is a reliable diagnostic tool to evaluate and locate the defects of a technology. In this study, LFN is used to assess effects of deuterium $(H^{+}$ ions) in diffusion condition on the robustness of 0.25 275 $mum^{2}$ gate area AlGaN/GaN high electron mobility transistors (HEMT) grown on Si substrate. $H^{+}$ ions are diffused from the above AlGaN/GaN layer through the AlGaN/GaN interface and GaN layer, notably under the gated channel where the defects are located. Two batches of devices are stressed under high temperature condition at 400degC during 5 minutes (step 1) and 500degC during 15 minutes (step 2). The first batch is composed with 8 deuterated transistors while the second batch is composed with 8 non deuterated transistors. Static measurements and low frequency noise spectral density measurements of the drain current $(S_{ID})$ are examined after each step of temperature. The first step does not reveal any degradation, while the second step highlights significative differences between the deuterated and non deuterated devices: LFN of deuterated devices remains constant, whereas LFN of non deuterated devices increases (GR superimposed with 1/f flicker noise). The deuteration of the devices can open the way to robust temperature devices, as AlGaN/GaN HEMT are dedicated to applications at high power and high temperature.
Starting Page	187
Ending Page	189
File Size	286831
Page Count	3
File Format	PDF
ISBN	9782874870071
DOI	10.1109/EMICC.2008.4772260
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-27
Publisher Place	Netherlands
Access Restriction	Subscribed
Rights Holder	European Microwave Assoc.
Subject Keyword	Deuterium Temperature Density measurement Current measurement HEMTs Low-frequency noise Noise robustness Gallium nitride MODFETs Aluminum gallium nitride
Content Type	Text
Resource Type	Article

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Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defects

Characterization and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs

RF characteristics of AlGaN/GaN HEMTs under different temperatures

Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs

Device reliability study of GaN HEMTs using both low frequency noise and microwave noise temperature spectroscopy

Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs

Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs

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Increased reliability of AlGaN/GaN HEMTs versus temperature using deuterium

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