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Content Provider | IEEE Xplore Digital Library |
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Author | Woods, W. Guoan Wang Hanyi Ding |
Copyright Year | 2008 |
Description | Author affiliation: IBM Microelectron., Essex Junction, VT (Woods, W.; Guoan Wang; Hanyi Ding) |
Abstract | As operating frequencies increase in state-of-the-art wireless designs, highly accurate modelling of critical interconnect paths routed over silicon is crucial for first-pass design success [1]. With this in mind, the interconnect stack of an IBM silicon germanium (SiGe) process incorporating a TSV ground supply network was modelled with model accuracy and efficiency as the goals. A unique modelling methodology for assigning the values of silicon skin-effect circuit model elements is discussed. The final model is verified with hardware measurements and found to accurately estimate the frequency-dependent resistance, capacitance, and inductance of a single line over silicon at microwave frequencies in a compact, efficient, pre-layout circuit model that includes the effects of process variation. |
Starting Page | 342 |
Ending Page | 345 |
File Size | 779349 |
Page Count | 4 |
File Format | |
ISBN | 9782874870071 |
DOI | 10.1109/EMICC.2008.4772299 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2008-10-27 |
Publisher Place | Netherlands |
Access Restriction | Subscribed |
Rights Holder | European Microwave Assoc. |
Subject Keyword | Germanium silicon alloys Integrated circuit interconnections Passive circuits Frequency estimation Hardware Capacitance measurement Electrical resistance measurement Through-silicon vias Inductance measurement Silicon germanium |
Content Type | Text |
Resource Type | Article |
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