NDLI: Monolithic MEMS T-type Switch for Redundancy Switch Matrix Applications

Content Provider	IEEE Xplore Digital Library
Author	King Yuk Chan Daneshmand, M. Fomani, A.A. Mansour, R.R. Ramer, R.
Copyright Year	2008
Description	Author affiliation: Sch. of Electr. & Telecommun. Eng., Univ. of New South Wales, Sydney, NSW (King Yuk Chan; Ramer, R.) \|\| Centre for Integrated RF Eng. (CIRFE), Univ. of Waterloo, Waterloo, ON (Daneshmand, M.; Fomani, A.A.; Mansour, R.R.)
Abstract	This paper presents a novel approach to monolithically implementing RF MEMS T-type switches for redundancy switch matrix applications. The T-type switch performs three operational states: two turning states and one crossover state. A six-mask fabrication process is adapted to fabricate the proposed design. Novel RF circuits were used to implement the entire system, including series contact cantilever beams, RF crossover, 90 degree turns and four-port cross junctions. The measured results for the entire T-type switch demonstrate an insertion loss of 1.5 dB, a return loss of better than -20 dB and an isolation higher than 28 dB for all states for frequencies up to 30 GHz. To our knowledge, this is the first time an RF MEMS T-type switch has ever been reported.
Starting Page	486
Ending Page	489
File Size	769370
Page Count	4
File Format	PDF
ISBN	9782874870071
DOI	10.1109/EMICC.2008.4772335
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-27
Publisher Place	Netherlands
Access Restriction	Subscribed
Rights Holder	European Microwave Assoc.
Subject Keyword	Micromechanical devices Radio frequency Fabrication Contacts Circuits Switches Radiofrequency microelectromechanical systems Turning Frequency measurement Structural beams
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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