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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | ShiChang Zhong Tangsheng Chen Chunjiang Ren Gang Jiao Chen Chen Kai Shao Naibin Yang |
| Copyright Year | 2008 |
| Description | Author affiliation: Nat. Key Lab. of Monolithic Integrated Circuits & Modules, Nanjing Electron. Devices Inst., Nanjing (ShiChang Zhong; Tangsheng Chen; Chunjiang Ren; Gang Jiao; Chen Chen; Kai Shao; Naibin Yang) |
| Abstract | AlGaN/GaN HEMT using field plate and recessed gate for X-band application was developed on SiC substrate. Internal matching circuits were designed to achieve high gain at 8 GHz for the developed device with single chip and four chips combining, respectively. The internally matched 5.52 mm single chip AlGaN/GaN HEMT exhibited 36.5 W CW output power with a power added efficiency (PAE) of 40.1% and power density of 6.6 W/mm at 35 V drain bias voltage (Vds). The device with four chips combining demonstrated a CW over 100 W across the band of 7.7-8.2 GHz, and an maximum CW output power of 119.1 W with PAE of 38.2% at Vds =31.5 V. This is the highest output power for AlGaN/GaN HEMT operated at X-band to the best of our knowledge. |
| Starting Page | 91 |
| Ending Page | 94 |
| File Size | 490449 |
| Page Count | 4 |
| File Format | |
| ISBN | 9782874870071 |
| DOI | 10.1109/EMICC.2008.4772236 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-10-27 |
| Publisher Place | Netherlands |
| Access Restriction | Subscribed |
| Rights Holder | European Microwave Assoc. |
| Subject Keyword | Silicon carbide Pulse measurements Circuits Power amplifiers Voltage HEMTs Gallium nitride Aluminum gallium nitride Power generation Substrates |
| Content Type | Text |
| Resource Type | Article |
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