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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chang, H.H. Tsai, W.L. Chien, C.H. Fu, H.C. Chiang, C.W. Chen, Y.H. Lo, W.C. |
| Copyright Year | 2012 |
| Description | Author affiliation: Electronics and Optoelectronics Research Labs, Industrial Technology Research Institute, Rm. 200, Bldg. 17, 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 31040, R.O.C. (Chang, H.H.; Tsai, W.L.; Chien, C.H.; Fu, H.C.; Chiang, C.W.; Chen, Y.H.; Lo, W.C.) |
| Abstract | After temporary bonding and thinning process, many backside processes will be conducted on the thinned wafer. The critical processes for thin wafer handling material are high temperature and high vacuum processes. In this article, a quick adhesive selecting method is proposed. Backside process of PECVD SiO2 is identified as the most critical process for thin wafer handling material selection. Two thermal plastic thin wafer handling materials are used in this study for 300 mm wafers and thermal compress bonding in a vacuum chamber is used for bonding process. After bonding, the wafer is thinned down to 50 µm by a commercialized grinder and the PECVD SiO2 process is conducted on the thinned wafer. Many dishes were found after PECVD SiO2 process because there is outgassing from the thin wafer handling material or from the device/carrier wafer surface. In this research, an additional hold time is proposed to reduce the dishing after PECVD SiO2 process. Different hold time at 210 °C and different bonding time are evaluated. For the bonding process without hold time, large voids are observed. There are also 29 dishes on the surface of the wafer. By adding additional 5 minutes hold time before bonding, the number of the dishing on the wafer surface reduced from 29 to 6. If the hold time is set to 10 minutes, only 4 dishes were found on the wafer surface. From the evaluation result of these two thermal plastic thin wafer handling materials, B-glue seems much better than A-glue. The hold time seems very critical on void reduction during bonding process. From B-glue on PECVD SiO2 experiment, 10 minutes hold time has the better performance for void reduction. The bonding process with zero hold time has the worst performance which has many voids after PECVD SiO2 process. An ultra-thin 300 mm wafer with a thickness less than 7 µm is also demonstrated in this research by using B-glue and 10 minutes hold time. |
| Starting Page | 76 |
| Ending Page | 79 |
| File Size | 1680446 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467316354 |
| ISSN | 21505934 |
| e-ISBN | 9781467316385 |
| e-ISBN | 9781467316378 |
| DOI | 10.1109/IMPACT.2012.6420308 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-24 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Resistance Force Copper Bonding Surface treatment Substrates |
| Content Type | Text |
| Resource Type | Article |
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