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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shang-Chou Chang To-Sing Li Che-Ning Yang Chen-Ming Wu Tien-Chai Lin |
| Copyright Year | 2012 |
| Description | Author affiliation: Department of Electrical Engineering, Kun Shan University, Tainan 71003, Taiwan (Shang-Chou Chang; To-Sing Li; Che-Ning Yang; Chen-Ming Wu; Tien-Chai Lin) |
| Abstract | To investigate whether heating rate of post-annealing can affect the microstructure, electrical and optical properties of gallium and aluminum co-doped zinc oxide (GAZO) films or not, GAZO films were post-annealed with 9°C/min and 30°C/min heating rate. The GAZO films post-annealed with 9°C/min heating rate appears smaller full width at half maxima of (002) diffraction peak, more uniform and bigger grain size, higher mobility, lower resistivity, higher average optical transmittance and higher figure of merit than those with 30°C/min heating rate. Low heating rate like 9°C/min in post-annealing can provide more time in thermal reaction for GAZO films at a certain heating temperature. This scenario may explain the above phenomena. |
| Starting Page | 337 |
| Ending Page | 339 |
| File Size | 828753 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781467316354 |
| ISSN | 21505934 |
| e-ISBN | 9781467316385 |
| e-ISBN | 9781467316378 |
| DOI | 10.1109/IMPACT.2012.6420240 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-24 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Optical diffraction Zinc oxide gallium and aluminum doped zinc oxide Optical films Microstructure heating rate Resistance heating |
| Content Type | Text |
| Resource Type | Article |
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