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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Li, J.K. Tseng, H.C. |
| Copyright Year | 2010 |
| Description | Author affiliation: Department of Electronic Engineering, Kun-Shan University, Yung-Kang City, Tainan County 710, Taiwan, R.O.C. (Li, J.K.) || Nanotechnology Research and Development Center, Kun Shan University, Yung-Kang City, Tainan County 710, Taiwan, R.O.C. (Tseng, H.C.) |
| Abstract | Semiconductor market trends indicate the rapid development of new integrated systems containing both optoelectronic and wireless-communication functionalities [1]. For projection-display devices and high-density optical disks in new integrated systems, the green light can be generated from solid-state lasers, in combination with second-harmonic generation (SHG) crystal, owing to their distinct features such as low noise, high-frequency-modulation capability, compactness, and low-power consumption [2]. The 1060 nm InGaAs quantum-well (QW) laser diode is one of applicable active components for this application [3]. However, the internal loss (αj), the internal quantum efficiency (ηj, and the transparency current density (Jth), which are fig-ures-of-merit (FoMs) for the QW laser under high-power-laser operation, are needed to be further improved. In the other respect, the low-noise amplifier (LNA), for wireless-communication functionalities in new integrated systems, is exploited to overcome the noise produced in subsequent stages by amplifying incoming radio-frequency (RF) signals, while introducing minimum amount of noise [4]. Nowadays, the SiGe LNA employing HBTs has been a main contender among the Si-based IC industry due to their advantages of higher cutoff frequency, lower noise, and better power performance. In general, the performance of SiGe LNAs relies on the geometrical-scaling issue, e.g., the emitter-length scaling [5]. For the HBT-based LNA design, attention should be devoted to optimizing FoMs such as the minimum noise figure (NFmm) and the associated available gain (GA, assoc) [6]. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 115224 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424497836 |
| ISSN | 21505942 |
| e-ISBN | 9781424497867 |
| e-ISBN | 9781424497850 |
| DOI | 10.1109/IMPACT.2010.5699649 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-10-20 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Low-noise amplifiers Gallium Noise Indium gallium arsenide Optimization Biological cells Silicon germanium |
| Content Type | Text |
| Resource Type | Article |
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