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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Duh, K.H.G. Chao, P.C. Ho, P. Tessmer, A. Liu, S.M.J. Kao, M.Y. Smith, P.M. Ballingall, J.M. |
| Copyright Year | 1990 |
| Description | Author affiliation: GE Electron. Lab., Syracuse, NY, USA (Duh, K.H.G.; Chao, P.C.; Ho, P.; Tessmer, A.; Liu, S.M.J.; Kao, M.Y.; Smith, P.M.; Ballingall, J.M.) |
| Abstract | The authors report 0.15- mu m gate length GaAs-based and InP-based InGaAs channel high-electron-mobility transistors (HEMTs) that have exhibited state-of-the-art noise and gain performance well up to 100 GHz. 94-GHz noise figures of 2.4 and 1.4 dB with gains of 5.4 and 6.5 dB have been measured from GaAs- and InP-based HEMTs, respectively. High-performance W-band multistage amplifiers have been built using these devices. A two-stage GaAs-based amplifier exhibits a noise figure of 4.2 dB with a gain of 9.7 dB at 93 GHz, and a three-stage amplifier yields a 4.5-dB noise figure with 14.8-dB gain at 94 GHz. The best two-stage amplifier built with InP-based HEMTs exhibits a minimum noise figure of 3.2 dB with a gain of 11.5+or-0.4 dB from 88 to 96 GHz. A noise figure as low as 3.3 dB with gain of 17.3+or-0.5 dB from 88 to 96 GHz has also been demonstrated from a three-stage amplifier. The characteristics and performance of both devices are presented. |
| Starting Page | 595 |
| Ending Page | 598 |
| File Size | 267584 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/MWSYM.1990.99650 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1990-05-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium gallium arsenide HEMTs Low-noise amplifiers Noise figure Gallium arsenide Gain measurement Performance gain Noise measurement Indium phosphide Laboratories |
| Content Type | Text |
| Resource Type | Article |
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