NDLI: Effect on pull-in voltage and current in NEMFET by scaling channel length

Content Provider	IEEE Xplore Digital Library
Author	Haldar, R. Guha, K. Baishya, S.
Copyright Year	2015
Description	Author affiliation: Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Silchar, India (Haldar, R.; Guha, K.; Baishya, S.)
Abstract	The MEMS platform has attracted special attention in semiconductor industry especially for off state leakage and abrupt switching issues and Suspended Gate MOSFET was developed in micrometer scale 40 years ago. Following the technology trends NEMFET has been designed (Nano Electro-mechanical Field Effect Transistor) from micrometer scale to nanometer scale. In this paper and its performance parameters are investigated and its effect with the change of various parameters is simulated. Here we have introduced NEMFET which is having zero leakage because of the gate is separated from the channel during off state. First the reduction of channel length in micrometer scale is investigated and its effects on carrier concentration, pull-in voltage, current, sub threshold slope is analyzed. It is reported that there is small increase in sub threshold swing 58 mV/dec after decreasing channel length in nanometer scale at 60 nm channel length but the carrier concentration highly increases to $8.4*10^{24}$ $mol/m^{3}$ lead to increases the current to 1.32 mA and pull-in voltage decreases to 4.99 V. Moreover abrupt switching characteristics is achieved which fulfill the needs for VLSI circuit implementation. The simple structure and its switching and power issues may replace traditional MOSFET for VLSI circuit implementation in future.
Starting Page	1
Ending Page	4
File Size	988049
Page Count	4
File Format	PDF
ISBN	9781479986392
ISSN	21593450
e-ISBN	9781479986415
DOI	10.1109/TENCON.2015.7373022
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-11-01
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Switches MOSFET Capacitance Very large scale integration Switching circuits Leakage Current NEMFET Pull-in Voltage
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Computer Science Applications

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