NDLI: An analysis of the read margin and power consumption of crossbar ReRAM arrays

Content Provider	IEEE Xplore Digital Library
Author	Sujin Choi Wookyung Sun Hyein Lim Hyungsoon Shin
Copyright Year	2015
Description	Author affiliation: Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea (Sujin Choi; Wookyung Sun; Hyein Lim; Hyungsoon Shin)
Abstract	The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application.
Starting Page	1
Ending Page	3
File Size	244072
Page Count	3
File Format	PDF
ISBN	9781479986392
ISSN	21593450
e-ISBN	9781479986415
DOI	10.1109/TENCON.2015.7372853
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-11-01
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power demand Computer architecture Microprocessors Leakage currents Resistance Random access memory Voltage measurement power consumption Resistive Random Access Memory (ReRAM) crossbar array selector bias scheme read margin
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Computer Science Applications

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