NDLI: Effect of oxidation on SGOI nanowire biosensor fabrication using Ge condensation

Content Provider	IEEE Xplore Digital Library
Author	Kow-Ming Chang Chu-Feng Chen Chiung-Hui Lai Chin-Ning Wu Cheng-Ting Hsieh Yu-Bin Wang Chung-Hsien Liu
Copyright Year	2012
Description	Author affiliation: Dept. of Electronics. Engineering, Chung Hua University, No. 707, Sec.2, WuFu Rd., Hsinchu, 300, Taiwan, R.O.C. (Chiung-Hui Lai) \|\| Dept. of Elec. Engineering and Inst. of Elec., National Chiao-Tung University, No. 1001, University Rd., Hsinchu 300, Taiwan, R.O.C. (Kow-Ming Chang; Chu-Feng Chen; Chin-Ning Wu; Cheng-Ting Hsieh; Yu-Bin Wang; Chung-Hsien Liu)
Abstract	Ge condensation offers an attractive way to increase Ge the fraction of Ge in SGOI. From authors' previous investigations, increasing the fraction of Ge increases the sensitivity of the SiGe nanowire sensor. To understand how Ge condensation on an SGOI nanowire sensor helps to optimize the conditions of oxidation and improve the sensitivity of the sensor, the effect of oxidation gas and SiGe/α-Si stacked structure on the movement of Ge is examined. The results reveals that SiGe nanowire has a maximum sensitivity when it includes a 14% Ge containing Si layer that is stacked on a 200 Å-thick α-Si layer and is treated for 3 min with O gas to which is added 13% N gas.
Starting Page	708
Ending Page	711
File Size	598489
Page Count	4
File Format	PDF
ISBN	9781467311229
e-ISBN	9781467311243
DOI	10.1109/NEMS.2012.6196873
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-05
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nanoelectromechanical systems Silicon germanium oxidation SiGe-on-Insulator bio-sensor
Content Type	Text
Resource Type	Article

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