NDLI: Modeling the Effect of Gate Fringing and Dopant Redistribution on the Inverse Narrow Width Effect of Narrow Channel Shallow Trench Isolated MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Pandit, S. Sarkar, C.K.
Copyright Year	2011
Abstract	This paper presents an analytical physics-based model for width dependence of threshold voltage of nano-scale MOSFETs. Shallow trench isolated MOSFETs have been considered in the 90 nm and 65 nm technology nodes. The combined effect of gate fringing field and do pant redistribution has been considered for developing the model. The trench oxide parasitic capacitance is evaluated by conformal mapping technique and is then used to determine the width-dependent threshold voltage shift. The developed model has been validated by comparing the results predicted from the derived model with experimental data, simulation data and also with a similar model available in literature. It has been demonstrated that our model predicts more correctly the inverse narrow width effect on threshold voltage of nano-scale devices compared to the existing model.
Starting Page	195
Ending Page	200
File Size	373105
Page Count	6
File Format	PDF
ISBN	9781612843278
ISSN	10639667
DOI	10.1109/VLSID.2011.16
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-01-02
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Very large scale integration dopant redistribution nano-scale MOSFETs shallow trench isolation inverse narrow width effect gate fringing field
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Hardware and Architecture

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