| Content Provider |
IEEE Xplore Digital Library |
| Author |
Chen, F. Shinosky, M. Li, B. Christiansen, C. Lee, T. Aitken, J. Badami, D. Huang, E. Bonilla, G. Ko, T. Kane, T. Wang, Y. Zaitz, M. Nicholson, L. Angyal, M. Truong, C. Chen, X. Yang, G. Law, S.B. Tang, T.J. Petitdidier, S. Ribes, G. Oh, M. Child, C. Sawada, H. Kolics, A. Rigoutat, O. Gilbert, N. |
| Copyright Year |
2010 |
| Description |
Author affiliation: Toshiba America Inc., Hopewell Junction, NY 12533, USA (Sawada, H.) || IBM Microelectronics, Essex Junction, VT 05452, USA (Chen, F.; Shinosky, M.; Li, B.; Christiansen, C.; Lee, T.; Aitken, J.; Badami, D.) || IBM Microelectronics, Hopewell Junction, NY 12533, USA (Ko, T.; Kane, T.; Wang, Y.; Zaitz, M.; Nicholson, L.; Angyal, M.; Truong, C.; Chen, X.) || STMicroelectronics, Hopewell Junction, NY 12533, USA (Petitdidier, S.; Ribes, G.) || Lam Research Corporation, Fremont, CA, USA (Kolics, A.; Rigoutat, O.; Gilbert, N.) || GLOBALFOUNDRIES Singapore, Hopewell Junction, NY 12533, USA (Yang, G.; Law, S.B.; Tang, T.J.) || IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA (Huang, E.; Bonilla, G.) || GLOBALFOUNDRIES, Inc, Hopewell Junction, NY 12533, USA (Oh, M.; Child, C.) |
| Abstract |
as the current-carrying capability of a copper line is reduced due to interconnect dimension shrinkage, self-aligned CoWP metal-cap has been reported to be helpful to improve degraded electromigration (EM) reliability. However, adoption of the metal cap in general further exacerbates the already problematic low-k dielectric TDDB reliability at 32nm and beyond. This paper provides a comprehensive study of CoWP metal-cap impacts on low-k TDDB for 32nm technology application. It was found that CoWP could induce a severe degradation of low-k TDDB if its process is not optimized, and its impacts on dense low-k and porous ultra low-k (ULK) dielectrics were different. An optimized CoWP process with the least defect density could lead to an acceptable TDDB performance as compared to the control for both dense low-k and porous ULK dielectrics, while showing substantial improvements in EM and stress migration (SM). |
| Starting Page |
566 |
| Ending Page |
573 |
| File Size |
1001561 |
| Page Count |
8 |
| File Format |
PDF |
| ISBN |
9781424454303 |
| ISSN |
19381891 |
| e-ISBN |
9781424454297 |
| DOI |
10.1109/IRPS.2010.5488768 |
| Language |
English |
| Publisher |
Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date |
2010-05-02 |
| Publisher Place |
USA |
| Access Restriction |
Subscribed |
| Rights Holder |
Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword |
Copper Integrated circuit interconnections Degradation Samarium Microelectronics Materials reliability Dielectric materials Inorganic materials Electromigration Stress control leakage time-dependent dielectric breakdown TDDB low-k reliability CoWP metal-cap low-k defect density EM SM |
| Content Type |
Text |
| Resource Type |
Article |
