NDLI: Bias temperature instability of binary oxide based ReRAM

Content Provider	IEEE Xplore Digital Library
Author	Fang, Z. Yu, H.Y. Liu, W.J. Pey, K.L. Li, X. Wu, L. Wang, Z.R. Lo, P.G.Q. Gao, B. Kang, J.F.
Copyright Year	2010
Description	Author affiliation: Institute of Microelectronics, Peking University, China (Gao, B.; Kang, J.F.) \|\| School of EEE, Nanyang Technological University, Singapore 639798 (Fang, Z.; Yu, H.Y.; Liu, W.J.; Pey, K.L.; Li, X.; Wu, L.; Wang, Z.R.) \|\| Institute of Microelectronics /A*STAR, Singapore (Lo, P.G.Q.)
Abstract	Bias temperature instability of TiN/HfO/Pt resistive random access memory (ReRAM) device is investigated in this work for the first time. As temperature increases (up to 100°C in this work), it is observed that: 1) leakage current at high resistance state (HRS) increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a lower On/Off ratio; 2) set and reset voltages decrease, which may be attributed to the higher oxygen ion mobility, in addition to the reduced potential barrier to create / recover oxygen ions (or oxygen vacancies); 3) electrical stress plays a negligible role as compared to the temperature impact on the ReRAM degradation; and 4) multi-level switching behavior exhibited at room temperature might not be retained.
Starting Page	964
Ending Page	965
File Size	710970
Page Count	2
File Format	PDF
ISBN	9781424454303
ISSN	19381891
e-ISBN	9781424454297
DOI	10.1109/IRPS.2010.5488697
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Tin Hafnium oxide Random access memory Leakage current Dielectrics Tunneling Voltage Stress Degradation Resistance random access memory Bias temperature instability
Content Type	Text
Resource Type	Article

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