NDLI: E- and √E-model too conservative to describe low field time dependent dielectric breakdown

Content Provider	IEEE Xplore Digital Library
Author	Croes, K. Tökei, Z.
Copyright Year	2010
Description	Author affiliation: Imec, Kapeldreef 75, B-3001 Leuven, Belgium (Croes, K.; Tökei, Z.)
Abstract	Extremely low field time dependent dielectric breakdown measurements were performed on single damascene structures with 90 and 50nm ½pitch integrated in a porous low-k material (k=2.5). We found with statistical significance that the E-model and the √E-model were too conservative to extrapolate our high field data to these low fields. Also, while soft breakdown does not occur at higher fields and wider spacings, we demonstrate that the time difference between soft and hard breakdown becomes significant in the 50nm ½pitch structures at normal operating fields. Besides this, we detected a change in distributional shape at these low fields and we argue that an extrinsic failure mode could be driving these failures or that the role of spacing variations across the wafer becomes more significant at lower fields.
Starting Page	543
Ending Page	548
File Size	512319
Page Count	6
File Format	PDF
ISBN	9781424454303
ISSN	19381891
e-ISBN	9781424454297
DOI	10.1109/IRPS.2010.5488772
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric breakdown Semiconductor device modeling Time measurement Dielectric materials Copper Testing Electric breakdown Area measurement Current measurement Temperature measurement low field BEOL copper low-k TDDB
Content Type	Text
Resource Type	Article

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