NDLI: Ultra low inductance power module for fast switching SiC power devices

Please wait, while we are loading the content...

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Message from the general chair

Best paper award

Sponsoring organizations

Table of contents

Call for papers

GaN transistors — Giving new life to Moore's Law

Application of power electronic devices in rail transportation traction system

Expansion of LED lighting and expectations for power semiconductors

How power electronics will reshape to meet the $21^{st}$ century challenges?

Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses

Ultra low miller capacitance trench-gate IGBT with the split gate structure

Next generation 650V $CSTBT^{TM}$ with improved SOA fabricated by an advanced thin wafer technology

Next generation 1200V trench CIGBT for high voltage applications

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Integrated reverse-diodes for GaN-HEMT structures

A high current density SOI-LIGBT with Segmented Trenches in the Anode region for suppressing negative differential resistance regime

A low substrate loss, monolithically integrated power inductor for compact LED drivers

A breakthrough concept of HVICs for high negative surge immunity

A RESURF P-N bimodal LDMOS suitable for high voltage power switching applications

95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses

Investigation of HCI reliability in interdigitated LDMOS

Optimization of a high-voltage MOSFET in ultra-thin 14nm FDSOI technology

Current enhancement by conductivity modulation in diamond JFETs for next generation low-loss power devices

Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RA and Q

The optimised design and characterization of 1200 V / 2.0 mΩ $cm^{2}$ 4H-SiC V-groove trench MOSFETs

Latest results on 1200 V 4H-SiC CIMOSFETs with Rsp, on of 3.9 $mΩ·cm^{2}$ at 150°C

Temperature dependence of single-event burnout for super junction MOSFET

Predictive half-cell simulations of filament formation during IGBT turn-off

Compact modeling and analysis of the Partially-Narrow-Mesa IGBT featuring low on-resistance and low switching loss

Multi-dimensional trade-off considerations of the 750V micro pattern trench IGBT for electric drive train applications

An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor” (BGCT)

Critical overcurrent turn-off close to IGBT current saturation

Investigation of anode-side temperature effect in 1200V FWD cosmic ray failure

Simulation studies for avalanche induced short-circuit current crowding of MOSFET-Mode IGBT

Theoretical limits of superjunction considering with charge imbalance margin

Study about Si wafer (mother) material for high speed LPT-CSTBT™ based on electrical and physical analysis

60 GHz wireless signal transmitting gate driver for IGBT

Superjunction IGBT vs. FS IGBT for 200°C operation

100 V class multiple stepped oxide field plate trench MOSFET (MSO-FP-MOSFET) aimed to ultimate structure realization

Fully-isolated NLDMOS behavior investigation during reverse recovery of parasitic diodes

A proposal of LDMOS using Deep Trench poly field plate

Modeling spatial and energy oxide trap distribution responsible for NBTI in p-channel power U-MOSFETs

A vertical current regulator diode with trench cathode based on double epitaxial layers for LED lighting

The boost transistor: A field plate controlled LDMOST

High voltage thick SOI-LIGBT with high current density and latch-up immunity

A capacitive-loaded level shift circuit for improving the noise immunity of high voltage gate drive IC

A 0.18μm SOI BCD technology for automotive application

The effect of the collector contact design on the performance and yield of 800V Lateral IGBTs for power ICs

Accumulation-mode high voltage SOI LDMOS with ultralow specific on-resistance

Automatic layout optimization of DMOS transistors for lower peak temperatures and increased energy capability

Demonstration of a HV BCD technology with LV CMOS process

4 $A/cm^{2},$ 7kV normally-off diamond-emitter vacuum switch

On-chip optical pumping of deep traps in AlGaN/GaN-on-Si power HEMTs

Investigations on degradation and optimization of 1.2kV 4H-SiC MOSFET under repetitive unclamped inductive switching stress

Enhancement-mode GaN-on-Si MOS-FET using Au-free Si process and its operation in PFC system with high-efficiency

Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance

Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit $SOA^{†}$

Series-connection of SiC normally-on JFETs

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs

Enhancement-mode GaN-on-Silicon MOS-HEMT using pure wet etch technique

70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

Stability of silicon carbide Schottky diodes against leakage current thermal runaway

Area- and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance

High-voltage full-SiC power module: Device fabrication, testing and high frequency application in kW-level converter

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT

1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination

Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study

22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA

Development of power semiconductors by quantitative nanoscale dopant imaging

A monolithic SiC drive circuit for SiC Power BJTs

High voltage Si/SiC hybrid switch: An ideal next step for SiC

SiC reversely switched dynistor (RSD) for pulse power application

A novel 3D transformer for ultra-compact signal isolation

Accelerated resistance degradation in aluminum by pulsed power cycling

Optimization of HV LDMOS devices accounting for packaging interaction

Reduced active and passive thermal cycling degradation by dynamic active cooling of power modules

Ultra low inductance power module for fast switching SiC power devices

Trends and opportunities in intelligent power modules (IPM)

Lifetime analysis of power modules with new packaging technologies

Methods for virtual junction temperature measurement respecting internal semiconductor processes

Highly integrated low-inductive power switches using double-etched substrates with through-hole viases

Fully integrated SOI gate driver for control of 1200V IGBT switches in three-level-NPC topology

Fully-isolated silicon RF LDMOS for high-efficiency mobile power conversion and RF amplification

Substrate coupling in fast-switching integrated power stages

Short-circuit failure mechanism of SiC power MOSFETs

A 10kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies

Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

A GaN HEMT driver IC with programmable slew rate and monolithic negative gate-drive supply and digital current-mode control

Impact of the backside potential on the current collapse of GaN SBDs and HEMTs

Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs

A modeling and experimental method for accurate thermal analysis of AlGaN/GaN powerbars

Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions

Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels

Predictive and efficient modeling of hot-carrier degradation in nLDMOS devices

An advanced p-channel LDMOS FET with HTRB tolerability of high-voltage pulse transmitter ICs for ultrasound applications

Self-heating enhanced HCI degradation in pLDMOSFETs

A novel trench shielded MOSFET with buried field ring for tunable switching and improved ruggedness

Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

1.7kV high-power IGBT fabrication by bonded-wafer-concept

A novel ultra-low loss four inch thyristor for UHVDC

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

2012 24th International Symposium on Power Semiconductor Devices and ICs

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)

2009 21st International Symposium on Power Semiconductor Devices & IC's

2008 20th International Symposium on Power Semiconductor Devices and IC's

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

2006 IEEE International Symposium on Power Semiconductor Devices and IC's

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs

Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

Ultra low inductance power module for fast switching SiC power devices

Content Provider	IEEE Xplore Digital Library
Author	Takao, K. Kyogoku, S.
Copyright Year	2015
Description	Author affiliation: Corp. R&D Center, Toshiba Corp., Kawasaki, Japan (Takao, K.; Kyogoku, S.)
Abstract	A novel packaging structure for high-speed switching silicon carbide (SiC) power modules has been proposed based on antiparalleled phase leg units. A prototype 1200 V-360 A SiC power module is developed using SiC-MOSFETs and SiC-SBDs and the very low parasitic inductance of 3.8 nH has been achieved. The experimental results show that the ultra-fast switching can be available owing to the very low parasitic inductance.
Starting Page	313
Ending Page	316
File Size	682841
Page Count	4
File Format	PDF
ISBN	9781479962594
ISSN	1943653X
e-ISBN	9781479962617
DOI	10.1109/ISPSD.2015.7123452
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-10
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Inductance Silicon carbide Multichip modules Switches MOSFET Integrated circuit modeling Capacitors Fast switching Power mobule Parasitic inductance
Content Type	Text
Resource Type	Article

Central Library (ISO-9001:2015 Certified)
Indian Institute of Technology Kharagpur
Kharagpur, West Bengal, India | PIN - 721302

See location in the Map
03222 282435
Mail: support@ndl.gov.in

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in