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Content Provider | IEEE Xplore Digital Library |
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Author | Qiang Xiao Yang Yan Xinke Wu Na Ren Kuang Sheng |
Copyright Year | 2015 |
Description | Author affiliation: Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China (Qiang Xiao; Yang Yan; Xinke Wu; Na Ren; Kuang Sheng) |
Abstract | In this paper, an innovative series-parallel hybrid circuit topology with silicon carbide MOSFETs is presented and analyzed. This topology consists of two uniform parts in parallel and each of the parts includes three sub-parts in series. The sub-part contains three primary parts connected in string where each of these primary parts has a parallel of two SiC MOSFETs. These 36 SiC devices are divided into six sub-parts, which are driven by a common driving signal. A 10kV/200A SiC MOSFETs module is fabricated based on this hybrid topology with thirty-six 1200V/50A SiC MOSFET dies. The dynamic switching behavior of the module is analyzed and double-pulse tests have been performed at 5400V/200A. The results show a good switching speed of 100ns in turn-on process and 200ns in turn-off process. |
Starting Page | 349 |
Ending Page | 352 |
File Size | 611710 |
Page Count | 4 |
File Format | |
ISBN | 9781479962594 |
ISSN | 1943653X |
e-ISBN | 9781479962617 |
DOI | 10.1109/ISPSD.2015.7123461 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2015-05-10 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Silicon carbide MOSFET Logic gates Switches Clamps Switching circuits Capacitance innovative series-parallel circuit SiC MOSFET high power module |
Content Type | Text |
Resource Type | Article |
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