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Content Provider | IEEE Xplore Digital Library |
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Author | Xiaoqing Song Huang, A.Q. Meng-Chia Lee Chang Peng |
Copyright Year | 2015 |
Description | Author affiliation: FREEDM Syst. Center, North Carolina State Univ., Raleigh, NC, USA (Xiaoqing Song; Huang, A.Q.; Meng-Chia Lee; Chang Peng) |
Abstract | Silicon carbide (SiC) power switches such as MOSFET or JFET have demonstrated their superior advantages over silicon (Si) power devices such as IGBT, especially in terms of significantly reduced switching losses. A major issue facing large scale adoption of SiC power devices is still the much higher cost. This paper proposes that Si/SiC hybrid switch should be a natural next step moving forward for high voltage applications to address the cost issue. In the proposed Si/SiC hybrid switch, a SiC MOSFET is connected in parallel with Si IGBT to combine the advantages of IGBT and MOSFET. This concept can also works well with SiC JFET. A 6.5 kV Si IGBT and SiC MOSFET hybrid switch is developed as an example to demonstrate its superior cost/performance. The switching loss can be reduced by more than 70% at a cost of only 50% higher compared to Si IGBT. This work is especially essential for high voltage applications such as medium voltage motor drive, FACTS and HVDC systems. |
Starting Page | 289 |
Ending Page | 292 |
File Size | 496390 |
Page Count | 4 |
File Format | |
ISBN | 9781479962594 |
ISSN | 1943653X |
e-ISBN | 9781479962617 |
DOI | 10.1109/ISPSD.2015.7123446 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2015-05-10 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Silicon carbide Silicon Insulated gate bipolar transistors MOSFET Switches Hybrid power systems Switching loss turn-off loss hybrid switch IGBT JFET |
Content Type | Text |
Resource Type | Article |
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