NDLI: Ultra low miller capacitance trench-gate IGBT with the split gate structure

Content Provider	IEEE Xplore Digital Library
Author	Ohi, K. Ikura, Y. Yoshimoto, A. Sugimura, K. Onozawa, Y. Takahashi, H. Otsuki, M.
Copyright Year	2015
Description	Author affiliation: Fuji Electr. Co., Ltd., Matsumoto, Japan (Ohi, K.; Ikura, Y.; Yoshimoto, A.; Sugimura, K.; Onozawa, Y.; Takahashi, H.; Otsuki, M.)
Abstract	This paper presents a newly developed trench gate IGBT which utilizes the split gate structure. It can realize both low Miller capacitance and high Injection Enhancement (IE) effect. The Miller capacitance has been reduced to 1/10 compared to that of the general trench gate structure with floating p-base. As a result, the turn-on power dissipation has been reduced by about 10% under the same turn-on di/dt and high recovery dV/dt controllability has also been achieved because of its lower gate-collector coupling. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved by about 15% compared to the conventional IGBT.
Starting Page	25
Ending Page	28
File Size	513517
Page Count	4
File Format	PDF
ISBN	9781479962594
ISSN	1943653X
e-ISBN	9781479962617
DOI	10.1109/ISPSD.2015.7123380
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-10
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Insulated gate bipolar transistors Capacitance Electrodes Integrated circuits Power dissipation Resistance FWD reverse recovery dV/dt Trench-gate IGBT Split gate Miller capacitance
Content Type	Text
Resource Type	Article

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