NDLI: Power mos current sensefet temperature drift study and improvement by the help of 3D simulations

Content Provider	IEEE Xplore Digital Library
Author	Germana, R.
Copyright Year	2012
Description	Author affiliation: STMicroelectronics, Body & Audio Division, R&D, ZI Rousset-Peynier, 13106 France (Germana, R.)
Abstract	A sensefet monitoring is used for overload, open-load detection and load current analog feedback. The sensefet matching properties to the main power mos represent the main quality factor of the device. Its current should be proportional to the main power one, maintaining the same coefficient over the entire temperature and biasing working range. In this work the effects of the edge cells layout and process are analyzed by the help of 3D device simulations. The causes for the real to theoretical ratio mismatch and the drift behavior versus the temperature are put into evidence. The corrective actions allow to reach 1÷2% of drift in the range −40°C to 150°C. Only technological considerations are here faced, concerning the construction and optimization of the structure.
Starting Page	413
Ending Page	416
File Size	730857
Page Count	4
File Format	PDF
ISBN	9781457715945
ISSN	19460201
e-ISBN	9781457715976
e-ISBN	9781457715969
DOI	10.1109/ISPSD.2012.6229109
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Logic gates Temperature Layout Doping Immune system Resistance sense ratio Current sensing temperature drift VDMOS Power mos
Content Type	Text
Resource Type	Article

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