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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zehong Li Min Ren Meng Zhang Shijiang Yu Jinping Zhang Bo Zhang Zhaoji Li |
| Copyright Year | 2012 |
| Description | Author affiliation: The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China (UESTC), Chengdu, 610054 (Zehong Li; Min Ren; Meng Zhang; Shijiang Yu; Jinping Zhang; Bo Zhang; Zhaoji Li) |
| Abstract | A novel Buried Layer Rectifier (BLR) is proposed and demonstrated, which features P-layers buried under the N-channel to create a barrier for majority carriers whose height can be modulated by the anode voltage. The forward conduction voltage (V) is considerably reduced due to the ultra-low barrier. The buried P-layers also significantly enhance the blocking capability and reduce the leakage current. Experiments show that the novel 100-V BLR exhibits an ultra-low V of 0.1V and a fast reverse recovery time (T) shorter than 20ns. |
| Starting Page | 105 |
| Ending Page | 108 |
| File Size | 1683436 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457715945 |
| ISSN | 19460201 |
| e-ISBN | 9781457715976 |
| e-ISBN | 9781457715969 |
| DOI | 10.1109/ISPSD.2012.6229034 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-06-03 |
| Publisher Place | Belgium |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Schottky diodes Junctions Rectifiers Doping Electric breakdown Breakdown voltage Anodes trade-off rectifier forward voltage drop reverse recovery |
| Content Type | Text |
| Resource Type | Article |
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